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Integrated Ferroelectrics - An International Journal

Integrated Ferroelectrics

An International Journal

Published By: Taylor & Francis
Volume Number: 122
Frequency: 9 issues per year
Print ISSN: 1058-4587
Online ISSN: 1607-8489
 

Aims & Scope

2008 Impact Factor: 0.242
Ranking: 60/62 (Physics, Condensed Matter), 94/95 (Physics, Applied) and 202/229 (Engineering, Electrical & Electronic)
2008 5-Year Impact Factor: 0.305
Ranking: 59/62 (Physics, Condensed Matter), 89/95 (Physics, Applied) and 192/229 (Engineering, Electrical & Electronic)
© 2009 Thomson Reuters, Journal Citation Reports®

Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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