Journal Details
Integrated Ferroelectrics
An International Journal
Published By: Taylor & Francis
Volume Number: 131
Frequency: 9 issues per year
Print ISSN: 1058-4587
Online ISSN: 1607-8489
Aims & Scope
2010 Impact Factor: 0.264
Ranking: 66/68 (Physics, Condensed Matter), 116/118 (Physics, Applied) and 215/247 (Engineering, Electrical & Electronic)
2010 5-Year Impact Factor: 0.269
Ranking: 65/68 (Physics, Condensed Matter), 111/118 (Physics, Applied) and 205/247 (Engineering, Electrical & Electronic)
© 2011 Thomson Reuters, 2010 Journal Citation Reports®
Ranking: 66/68 (Physics, Condensed Matter), 116/118 (Physics, Applied) and 215/247 (Engineering, Electrical & Electronic)
2010 5-Year Impact Factor: 0.269
Ranking: 65/68 (Physics, Condensed Matter), 111/118 (Physics, Applied) and 205/247 (Engineering, Electrical & Electronic)
© 2011 Thomson Reuters, 2010 Journal Citation Reports®
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
